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| NPN Silicon RF Transistor q BF 554 For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits Type BF 554 Marking CC Ordering Code (tape and reel) Q62702-F1042 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TA 25 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Rth JA Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values 20 30 5 30 280 150 - 65 ... + 150 Unit V mA mW C 450 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 07.94 BF 554 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector cutoff current VCB = 20 V, IE = 0 DC current gain IC = 1 mA, VCE = 10 V Base-emitter voltage IC = 1 mA, VCE = 10 V AC Characteristics Transition frequency IC = 1 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Noise figure IC = 1 mA, VCE = 10 V f = 200 kHz, gS = 2 mS f = 1 MHz, gS = 1.5 mS f = 100 MHz, gS = 10 mS Output conductance IC = 1 mA, VCE = 10 V, f = 0.5...10 MHz fT Ccb F - - - g22e - 1.5 1.2 3 4 - - - - S Values typ. max. Unit V(BR) CE0 ICB0 hFE VBE 20 - 60 - - - - 0.7 - 100 250 - V nA - V - - 250 0.6 - - MHz pF dB Semiconductor Group 2 BF 554 Total power dissipation Ptot = f (TA) DC current gain hFE = f (IC) VCE = 10 V Collector current IC = f (VBE) VCE = 10 V Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10 Semiconductor Group 3 BF 554 Collector cutoff current ICB0 = f (TA) VCB = 20 V Transition frequency fT = f (IC) VCE = 10 V, f = 100 MHz Collector-base capacitance Ccb = f (VCB) f = 1 MHz Noise figure F = f (f) IC = 1 mA, VCE = 10 V, RS = 60 Semiconductor Group 4 |
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